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Compact Dual-Source DC/RF Magnetron Sputtering System for Thin Film Deposition

The three-target magnetron sputtering system is designed for flexible thin film deposition and co-sputtering applications. It is equipped with three independent magnetron sputtering cathodes, allowing sequential sputtering, co-sputtering, or multilayer film deposition within a single process cycle.

Technical Parameters

Three-Target Magnetron Sputtering System Description

The three-target magnetron sputtering system is designed for flexible thin film deposition and co-sputtering applications. It is equipped with three independent magnetron sputtering cathodes, allowing sequential sputtering, co-sputtering, or multilayer film deposition within a single process cycle.

Each magnetron target can be configured with DC or RF power supplies according to the material properties, making the system suitable for metallic, alloy, semiconductor, ceramic, and dielectric coatings. Independent power control enables precise adjustment of deposition rates and film composition.

The vacuum chamber is manufactured from high-quality stainless steel and features multiple ports for magnetron heads, gas inlets, vacuum pumping, and observation windows. Uniform film thickness is achieved through optimized target geometry and optional substrate rotation.

This three-target magnetron sputtering system is widely used in research and development, functional thin films, optical coatings, electronic materials, and advanced material studies, where high repeatability, process flexibility, and material compatibility are required.

Technical Parameters:

No.ParameterSpecification
1ModelKS-PVD-MS450
2System   TypeHigh   vacuum multi-cathode magnetron sputtering system
3Loading   MethodManual   substrate loading
4Base   Pressure (Ultimate Vacuum)≤   5 × 10⁻⁷   mbar
5Working   Pressure Range1   – 5 mTorr
6Pressure   ControlAutomatic   pressure control
7Vacuum   MeasurementFull   range vacuum gauges
8Turbo   Molecular Pump Speed1200   L/s
9Dry   Backing Pump Speed4   L/s (≈14.4 m³/h)
10Number   of Magnetron Cathodes3   pcs
11Cathode   MountingTop-mounted
12Target   Size2   inch diameter
13Target   CoolingDirect   water cooling
14Source   ShuttersOne   shutter for each cathode
15Cathode–Substrate   DistanceAdjustable,   5 – 10 cm
16DC   Power Supplies2   units
17DC   Power Range0   – 600 W
18RF   Power Supply1   unit
19RF   Power Specification13.56   MHz, ≥ 600 W
20Compatible   Deposition MaterialsTi   / Pt / Au, AuGe / Ni / Au
21Process   GasArgon   (Ar), 99.999% purity
22Gas   Flow ControlMass   Flow Controller (MFC)
23Reactive   GasesN₂ / O₂   (optional)
24Thickness   MonitoringIn-situ   Quartz Crystal Monitor (QCM)
25Quartz   Crystals2   pcs
26Substrate   SizeUp   to 3 inch wafers
27Substrate   Heating TemperatureUp   to 500 °C
28Substrate   Rotation Speed0   – 20 rpm
29Film   Thickness Uniformity≤   3% within effective 3-inch area
30Control   SystemPC   / PLC control
31Software   PlatformCompatible   with Windows 10
32Power   Requirement220   – 240 VAC, 50 Hz