KS-MIB-560 magnetron and beam compound system is used in the preparation of nano-level single and multi layer functional film, hard film, metallic film, semiconductor film, dielectric film, ferromagnetic film and magnetic film etc. Can be widely used in semiconductor, microelectronic and new material etc.
Technical Parameters
| Model | KS-MIB-560 | ||
| Vacuum chamber size | Vertical cylindrical, size Ф550×450mm | ||
| Vacuum system feature | Compound molecular pump, mechanical pump, gate valve | ||
| Ultimate pressure | ≤6.67x10-5 Pa (after baking and degassing) | ||
| Time required to reacquire vacuum | 6.6x10-4 Pa in 40 mins (pumping after short exposure to air and filled with helium) | ||
| Water cooling substrate heating revolution table | Substrate size | 6 stations design, one station for heating furnace installation, rest of the station are water cooling substrate table | |
| Sample size | Load 6 piece of Ф30mm substrate | ||
| Mode of motion | Rotating 0-360°continuously | ||
| Heating | Max heating temperature 600°C±1°C | ||
| Substrate negative bias | -200V | ||
| Magnetron target unit | Permanent magnetron target × 4; target size Φ60mm (one of those can be used for sputtering ferromagnetic material); all targets are RF sputtering and DC sputtering compatible; distance between target and sample: 40-80mm, adjustable | ||
| 4 stations revolving target unit | Target size: 70×70mm | ||
| Primary sputtering ion gun | Extraction grid diameter: Φ30mm; ion beam power: 0.4～2.0Kev adjustable continuously; ion current intensity: 1～5mA/cm2 | ||
| Auxiliary deposition ion gun | Extraction grid diameter: Φ30mm; ion beam power: 0.4～1.5Kev adjustable continuously; ion current intensity: 1～3mA/cm2 | ||
| Gas circuit | 3-circuit mass flow controller | ||
| Computer control system | To control target baffle, 4 station rotating target position change, sample revolution, sample baffle, sample temperature control | ||
| Space occupied | Main unit | 1300×850mm2 | |
| Electric cabinet | 700×700mm2(Two) | ||
