Home - Products - PVD Coating Machine - Spherical Pulsed Laser Deposition(PLD) Systems for Oxides and Silicides
spherical pulsed laser deposition system (PLD)can be used to prepare thin films of various materials such as metals, semiconductors, oxides, nitrides, carbides, borides, silicides, sulfides and fluorides, and even to prepare some difficult-to-synthesize material films, such as diamond and cubic nitride films.
Technical Parameters
Product description:
This system is a spherical pulsed laser deposition system (PLD) process research and development equipment. Pulsed laser deposition (PLD) is a method of focusing the laser on a smaller area on the target material, using the high energy density of the laser to evaporate or even ionize part of the target material, so that it can break away from the target material and move toward the substrate, and then deposit on the substrate to form a thin film. Among the many thin film preparation methods, pulsed laser deposition technology is widely used. It can be used to prepare thin films of various materials such as metals, semiconductors, oxides, nitrides, carbides, borides, silicides, sulfides and fluorides, and even to prepare some difficult-to-synthesize material films, such as diamond and cubic nitride films.
Technical Parameters:
| Parameter | Specification |
| Model | KS-PVD-PLD450 |
| Main Vacuum System | Spherical chamber structure, chamber diameter: 450 mm |
| Loading Sample System | Vertical cylindrical structure, size: Ø150 × 150 mm |
| Vacuum Configuration (Main Chamber) | Mechanical pump + Molecular pump + Vacuum valves |
| Vacuum Configuration (Loading Chamber) | Shared mechanical pump and molecular pump with main chamber + Vacuum valves |
| Ultimate Pressure (Main Chamber) | ≤ 6 × 10⁻⁶ Pa (after baking and degassing) |
| Ultimate Pressure (Loading Chamber) | ≤ 6 × 10⁻³ Pa (after baking and degassing) |
| Vacuum Recovery Time (Main Chamber) | Reach 5 × 10⁻³ Pa within 20 min after brief atmospheric exposure and dry nitrogen purging |
| Vacuum Recovery Time (Loading Chamber) | Reach 5 × 10⁻³ Pa within 20 min after brief atmospheric exposure and dry nitrogen purging |
| Rotating Target Platform | Maximum target diameter: 60 mm |
| Number of Targets | Up to 4 targets installed simultaneously |
| Target Switching Method | Automatic rotational switching |
| Target Rotation Speed | 5 – 60 rpm, independently adjustable for each target |
| Substrate Size | Ø51 mm |
| Substrate Motion | Continuous rotation |
| Substrate Rotation Speed | 5 – 60 rpm |
| Substrate Heating Temperature | Up to 850°C ±1°C, adjustable and controllable |
| Gas Circuit System | 1-channel mass flow controller (MFC) + 1-channel inflation valve |
| Laser Compatibility | Compatible with Coherent 201 Laser |
| Laser Beam Scanning Device | 2D scanning mechanical stage with two degrees of freedom |
| Computer Control System | Controls target switching, target rotation, sample rotation, substrate temperature, laser beam scanning, and other functions |
| Main Unit Floor Space | 1800 × 1800 mm² |
| Electrical Cabinet Floor Space | 700 × 700 mm² (1 unit) |
