The KS-VF-BG80 crystal growth furnace is designed for crystal growth using the Bridgman and directional solidification methods. It operates under vacuum or controlled inert atmosphere, providing a stable axial thermal gradient and precisely controlled pulling speed to ensure high crystal quality. The system features a three-zone resistance heating structure, programmable temperature profiles, and automatic sample lifting
Technical Parameters
Crystal Growth Furnace (Bridgman / Directional Solidification)
The KS-VF-BG80 crystal growth furnace is designed for crystal growth using the Bridgman and directional solidification methods. It operates under vacuum or controlled inert atmosphere, providing a stable axial thermal gradient and precisely controlled pulling speed to ensure high crystal quality. The system features a three-zone resistance heating structure, programmable temperature profiles, and automatic sample lifting, making it suitable for research and development of high-quality single crystals up to 65 mm in diameter.
Technical Parameters:
| Parameter | Specification |
|---|---|
| Model | KS-VF-BG80 |
| Furnace Type | Crystal Growth Furnace with Bridgman / Directional Solidification Method |
| Application | Crystal growth using Bridgman / directional solidification method; routine growth of crystals up to Ø65 mm |
| Crystal Growth Environment | Vacuum up to 1500 °C; inert atmosphere up to 1600 °C |
| Crystal Growth Method | Vertical Bridgman method with precisely defined and controlled pulling speed |
| Maximum Crystal Diameter | ≤ Ø65 mm |
| Maximum Temperature (Short Term) | 1600 °C |
| Maximum Continuous Temperature | 1500 °C |
| Heating System | Resistance heating |
| Heating Rate | Up to 50 °C/min |
| Heating Zones | Three-zone furnace |
| Length of Each Heating Zone | 150 mm |
| Thermal Gradient | Stable axial thermal gradient |
| Temperature Measurement | Three C-type thermocouples |
| Additional Temperature Measurement | Probe thermocouple located next to the sample |
| Infrared Pyrometer | IR pyrometer integration supported |
| Temperature Control Method | PID control |
| Temperature Controller | High-precision Eurotherm 3504 PID controller |
| Temperature Control Program | 50-step programmable temperature profile |
| Temperature Control Accuracy | Independent zone control accuracy 0.1 °C |
| Axial Gradient Control | Programmable translation of temperature gradient along furnace length |
| Radial Uniformity Control | Radial division into four quadrants to eliminate radial non-uniformity |
| Critical Growth Zone Control | High-precision control within 1–2 inch axial heating zone |
| Furnace Tube Access | Swing-open furnace for quick access to furnace tube |
| Crucible Platform | Alumina platform Ø100 × 200 mm |
| Crucible Thermocouple | Thermocouple mounted at the bottom of the crucible |
| Sample Table | Automatic lifting sample table |
| Crucible Loading / Stroke | Automatic lifting system, 700 mm stroke |
| Furnace Vertical Travel | 500 mm |
| Furnace Moving Speed | 0.03 – 10 mm/h adjustable |
| Crystal Growth Rate | 0.3 – 10 mm/h adjustable |
| Atmosphere Control | Vacuum + inert gas |
| Working Gases | Argon (Ar) / Nitrogen (N₂) |
| Additional Gas Inlet | Additional gas inlet with valve and rotameter |
| Vacuum System (Standard) | Two-stage rotary vane pump + diffusion pump |
| Achievable Vacuum Level | Up to 10⁻³ mbar |
| Furnace Tube Material | High-purity alumina |
| Furnace Tube Size | Ø80 × 1700 mm |
| Chamber Structure | Stainless steel sealed flanges with water cooling |
| Cooling System | Closed-loop water chiller |
| Chiller Capacity | 10 L |
| Power Supply | 15 kW |
| Power Requirement | 220 V, 50 Hz |
| Equipment Dimensions (W×D×H) | 900 × 1000 × 3200 mm |
| Equipment Weight | Approx. 600 kg |
| Compatibility with Press Facility | Independent operation from VHP press system |
| Motion Control | Programmable movement with digital multi-step lifting control |
| Safety Protection | Over-temperature protection (shutdown on over-limit or thermocouple failure) |
| Power Failure Protection | Automatic resume from interruption point after power recovery |
| Sample Pulling Direction | Sample pulled downward into lower temperature zone |
| Pulling Mechanism | Sample and probe thermocouple fixed on bottom pulling device |
| Fast Movement Mode | Fast movement for loading and unloading |
| Growth Speed Control | User-defined pulling speed during crystal growth |
| Installation | Mounted on vibration isolation base |
| Alarm System | Remote alarm system supported |
| Documentation | Operation manual, maintenance manual, calibration certificate |
| Warranty | 1 year |
| Technical Support | Lifetime technical support |
