Advanced Plasma Enhanced CVD System for High-Quality Thin Film Deposition

The Plasma Enhanced Chemical Vapor Deposition (PECVD) system is designed for high-quality thin film deposition with excellent process stability and control. The system integrates precise RF plasma generation, uniform substrate heating, and accurate mass flow control, enabling reliable deposition of functional films with high uniformity and repeatability.

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Technical Parameters

Technical Parameters:

Category	Parameter	Specification
Model	Model	KS-PVD-PECVD350
Deposition Chamber	Chamber Size	Φ350 mm × 220 mm
	Chamber Material	SUS316L
	Viewports	Φ50 mm, 3 pcs
	Gas Showerhead	Φ200 mm
	Sample Stage	Φ200 mm
	Sample Stage Heating	RT – 800 °C
	Temperature Control Accuracy	Temperature uniformity ±1 °C
	Sample Stage Rotation	0 – 20 rpm adjustable
	Sample Stage Lift	Lift stroke 50 mm
	Deposition Pressure Range	0.133 – 133 Pa
RF Power Supply	Frequency	13.56 MHz
	Power Adjustment Range	0 – 500 W
	Maximum RF Power	1000 W
	Power Stability	±1%
Gas Supply System (MFC)	N₂ Flow	0 – 500 sccm
	H₂ Flow	0 – 500 sccm
	NH₃ Flow	0 – 500 sccm
	TMGa Flow	0 – 500 sccm
	Cp₂Mg Flow	0 – 500 sccm
	Si₂H₄ Flow	0 – 500 sccm
	Gas Line Material	SUS316L
	Gas Line Fittings	VCR 1/4" male
	Precursor Source Volume	500 mL, 2 pcs
	Precursor Heating Temperature	RT – 800 °C
	Bubbler Material	SUS316L
Vacuum System	Turbomolecular Pump	1200 L/s
	Double-Stage Rotary Vane Pump	4.7 L/s
	Ultimate Vacuum	5E-4 Pa
	Vacuum Measurement Range	5E-4 Pa – 1E5 Pa
Water Cooling System	Flow Rate	≥13 L/min
	Power	1 HP
	Temperature Control	≤35 °C
Equipment Power	Power Supply	AC 220 V, 50 Hz
	Total Power Consumption	Max 6 kW
Control System	Touch Screen	15.6" high-performance color touchscreen
	Control Mode	HMI + PLC intelligent control system with over-temperature and over-pressure automatic safety protection
General Specifications	Overall Dimensions (L×W×H)	750 × 1100 × 1300 mm
	Weight	350 kg

PECVD, plasma enhanced CVD