Home - Products - Crystal Growth Furnace - 4 arc pulling method single crystal growth furnace with 3000C temperature
KS-CGF-4CZ is a
pulling method single crystal growth furnace using 4 electric arcs (arc gas arc
is used to melt the sample, and the pulling device is pulled), and its
temperature can reach 3000 ℃.
This single crystal furnace is
especially suitable for growing single crystal with high melting point, such as
Ti single crystal, YSZ, SiC and CeRh2Si, etc.
Technical Parameters
Product Description:
KS-CGF-4CZ is a pulling method single crystal growth furnace using 4 electric arcs (arc gas arc is used to melt the sample, and the pulling device is pulled), and its temperature can reach 3000 ℃. The cavity is 304 stainless steel cavity (with water-cooled interlayer), and the vacuum degree can reach 10-5Torr. This single crystal furnace is especially suitable for growing single crystal with high melting point, such as Ti single crystal, YSZ, SiC and CeRh2Si, etc.
Technical Parameters:
| Product model | KS-GCF-4CZ crystal growth furnace |
| Chamber size | Φ257*360mm |
| Arc starting power | 18 V / 185 A Voltage 380V |
| Melting temperature | up to 3000℃ |
| Pulling speed | 0.2-10mm/h |
| Lifting stroke | 0-70mm |
| Rotating speed | 40RPM |
| Vacuum pump | The equipment is equipped with a molecular pump system (mechanical pump + vortex molecular pump) |
| Circulating water chiller | Water flow rate with 58L/min |
